Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-06-10
2009-10-20
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S700000, C385S094000
Reexamination Certificate
active
07605049
ABSTRACT:
A transistor that forms an integrated circuit, a photo detector and a micromirror are mounted on the same semiconductor substrate in an optical semiconductor device of the present invention, which has an antireflection film that is formed on the photo detector, a first insulating film which is formed on the antireflection film and in which an opening is created in the state where the antireflection film is exposed, and an etching stopping film which is formed on the first insulating film and which has been left in the periphery around the opening in the first insulating film on the antireflection film and in the periphery around the portion above the micromirror.
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Ito Ryoichi
Iwai Takaki
Taniguchi Masaki
Yasukawa Hisatada
McDermott Will & Emery LLP
Panasonic Corporation
Rao Steven H
Weiss Howard
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