Optical semiconductor device and a method of manufacturing the s

Details Optical semiconductor device and a method of manufacturing the s Optical semiconductor device and a method of manufacturing the s

1997-04-02

1999-11-16

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 46, 385 14, 385131, H01S 318

Patent

active

059870460

ABSTRACT:
An optical semiconductor device of the present invention is provided with a core layer having a quantum well layer in that film thickness gets thinner from a inner region to an end portion in an optical waveguide region.

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IEEE Photonics Technology Letters, vol. 5, No. 4, Apr. 1993, New York US, pp. 448-450.
T.M. Cockerill et al. 'Monolithic integration of a strained layer InGaAs-GaAs-AlGaAs quantum well laser with a pasive waveguide by selective area MOCVD' entire document.
IEEE Journal of Quantum Electronics, vol. 29, No. 6, Jun. 1993, New York, US pp. 2088-2096, M. Aoki et al. 'InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by Band-gap energy control selective area MOCVD' paragraph I; figure 8.
T.L. Koch, "Tapered Waveguide InGaAs/InGaAsP Multiple-Quantum-Well Lasers", IEEE Photonics Technology Letter, vol. 2, No. 2, Feb. 1990, pp. 88-90.
The Institute of Electronics Information Communication in Japan, National Autumn Meeting 1993, No. C-182 Sep. 1993.
Kazuo Kasaya et al, NTT Opto-Electronics Laboritories, The Institute of Electronic Information Communications in Japan, National Autumn Meeting 1993 (no month available).

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