Optical semiconductor device

Details Optical semiconductor device Optical semiconductor device

1990-09-25

1992-08-04

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

357 4, 357 16, 357 17, H01S 319

Patent

active

051366029

ABSTRACT:
An InP p-n diode having an MQW consisting of an InP barrier layer and an In.sub.1-x Ga.sub.x As well layer as an active layer. An optical modulating diode in which a composition of a value 0.44 which is smaller than the x value 0.47 at which lattices are matched is selected so as to cause compressive strain in the well layer, and an optical bistable diode in which a composition of a value 0.55 which is greater than 0.47 is selected so as to cause tensile strain in the well layer.

REFERENCES:
patent: Re22893 (1989-03-01), Miller
patent: 4897699 (1990-01-01), Razeghi et al.
patent: 4927471 (1990-05-01), Okuda
patent: 4929984 (1990-05-01), Muto et al.
patent: 4941025 (1990-07-01), Tabatabaie
patent: 4952792 (1990-08-01), Caridi
patent: 4984242 (1991-01-01), Scifres et al.
Songcheol Hong et al., Effect of the Lifting of Kramer's Degeneracy on Excitonic Linewidths in Quantum Well Optical Modulators, Aug. 29, 1988, vol. 53, No. 9, pp. 731-733, New York, U.S.
D. R. P. Guy et al., Experimental Study of InGaAs-InP MQW Electroabsorption Modulators, Feb. 1989, vol.136, No. 1, pp. 46-51.
U. Koren et al., InGaAs/InP Multiple Quantum Well Waveguide Phase Modulator, Feb. 16, 1987, vol. 50, No. 7, pp. 368-370, p. 368, right column, line 7-line 26, FIG. 1, New York, U.S.
K. Wakita et al., Dynamic Frequency Response for InGaAs/InAlAs Multiple Quantum Well Optical Modulators, Jan. 1989, vol. 1, No. 1, pp. 19-20, New York, U.S.
D. A. B. Miller, Quantum Wells for Optical Information Processing, May 1987, vol. 26, No. 5, pp. 368-372, New Jersey, U.S.
M. Sugawara et al., Evaluation of Exciton Absorption Peak Broadening Factors in InGaAsP/InP, Sep. 11, 1988, pp. 309-312, Atlanta, U.S.

Affiliated with

Also associated with

Rating

Optical semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optical semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-785235