Optical semiconductor device

Details Optical semiconductor device Optical semiconductor device

1991-10-30

1994-01-25

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant material

257103, 257607, 257 86, H01L 29167, H01L 29227, H01S 319

Patent

active

052818314

ABSTRACT:
AlN is added to a SiC light emitting layer of an optical semiconductor device in a molecular state, and an association of AlN is formed between crystal lattice points, which are close to each other in said light emitting layer. Said association is largely different from said SiC in degree of electron negativity so that said association traps a carrier in said light emitting layer, and forms an exciton.

REFERENCES:
patent: 3735212 (1973-05-01), Kun
patent: 4213781 (1980-07-01), Norieka et al.
patent: 4857971 (1989-08-01), Burnham
patent: 5117267 (1992-05-01), Kimoto et al.
Physical Review, vol. 170, No. 3, pp. 739-748, Jun. 15, 1968, Cuthbert et al: Temperature-Dependent Radiative Recombination . . .

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