Optical semiconductor device

Details Optical semiconductor device Optical semiconductor device

1985-12-02

1988-08-02

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 16, 357 17, 357 2, H01S 319

Patent

active

047617900

ABSTRACT:
An optical semiconductor device comprising a GaAs substrate and a lamination of molecular layer units formed on said GaAs substrate, said molecular layer units being composed of binary compound semiconductors of InP, GaP and AlP.

REFERENCES:
patent: 4205329 (1980-05-01), Dingle et al.
Electronics Letters, vol. 19, No. 5, Mar. 3, 1983, pp. 163-165, Kawamura et al.: In Ga AIP DH laser diodes grown by MBE.
IEEE Electron Device Letters, vol. EDL-4, No. 7, Jul. 1983, pp. 212-214, Laidig et al.: All-binary AlAs-GaAs laser diode.
Japanese Journal of Applied Physics, vol. 22, No. 11, part 2, Nov. 1983, Yao: A new high electron mobility monolayer superlattice.

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