Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1992-02-12
1994-02-01
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257446, 257461, 257544, 257565, H01L 2714, H01L 2972, H01L 2702, H01L 2990
Patent
active
052834603
ABSTRACT:
An optical semiconductor includes a photo diode integrated with a transistor built on first and second epitaxial layers grown on a substrate, the first epitaxial layer is grown on the substrate from intrinsic material. The second epitaxial layer is grown doped on the first epitaxial layer. A separating area divides the optical semiconductor into first and second isolated islands. The separating area is made up of a lower separating area, a middle separating area and an upper separating area united to form a single separating area. The lower separating area is diffused at least upward from an interface between the substrate and the first epitaxial area. The middle separating area is diffused both downward and upward from an interface between the first and second epitaxial layers. The upper separating area is diffused downward from the surface of the second epitaxial layer. The photo diode is formed in the first island area, and the transistor is formed in the second island area. A counterdoped region in the surface of the substrate, at least below the first island, expands the depth of the depletion region of the photo diode. The separating area enters the substrate to a depth corresponding to the depth of the counterdoped region.
Morrison Thomas R.
Prenty Mark V.
Sanyo Electric Co,. Ltd.
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