Optical semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S443000, C257S432000, C438S070000

Reexamination Certificate

active

08030728

ABSTRACT:
An optical semiconductor device includes a semiconductor substrate; a light receiving element formed on the semiconductor substrate; a light absorbing element formed on the semiconductor substrate and located adjacent to the light receiving element; and a semiconductor element formed on the semiconductor substrate and used for signal processing. The light absorbing element includes a fifth semiconductor layer, and a light absorption region in the light receiving element has a different structure from a light absorption region in the light absorbing element.

REFERENCES:
patent: 5567974 (1996-10-01), Yoshitake et al.
patent: 6049118 (2000-04-01), Nagano
patent: 7345703 (2008-03-01), Lee
patent: 2006/0145223 (2006-07-01), Ryu
patent: 63-160270 (1988-07-01), None
patent: 07-131054 (1995-05-01), None
patent: 09-186307 (1997-07-01), None
patent: 2005-129701 (2005-05-01), None
patent: 2006-190857 (2006-07-01), None

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