Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2009-03-04
2011-10-04
Shingleton, Michael (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S443000, C257S432000, C438S070000
Reexamination Certificate
active
08030728
ABSTRACT:
An optical semiconductor device includes a semiconductor substrate; a light receiving element formed on the semiconductor substrate; a light absorbing element formed on the semiconductor substrate and located adjacent to the light receiving element; and a semiconductor element formed on the semiconductor substrate and used for signal processing. The light absorbing element includes a fifth semiconductor layer, and a light absorption region in the light receiving element has a different structure from a light absorption region in the light absorbing element.
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Iwai Takaki
Takehara Hironari
Yasukawa Hisatada
McDermott Will & Emery LLP
Panasonic Corporation
Shingleton Michael
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