Optical semiconductor device

Details Optical semiconductor device Optical semiconductor device

2008-05-29

2010-10-05

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

In combination with or also constituting light responsive...

C257S081000, C257S084000, C257S098000, C257SE31129

Reexamination Certificate

active

07808007

ABSTRACT:
A semiconductor light-emitting element is disposed in a depression of a container. A first fluorescent material layer is located in the depression. At least a portion of the first fluorescent material layer is provided between the opening of the depression and the semiconductor light-emitting element. A second fluorescent material layer having first and second portions is disposed in the depression. The first portion is provided between the bottom of the depression and the semiconductor light-emitting element. The second portion is provided between the side surface of the depression and the semiconductor light-emitting element. The first and second fluorescent material layers are excited by the light radiated from the semiconductor light-emitting element to emit a light having a first wavelength longer than the emission wavelength of the semiconductor light-emitting element and another light having a second wavelength longer than the first wavelength respectively.

REFERENCES:
patent: 7332746 (2008-02-01), Takahashi et al.
patent: 2006/0193121 (2006-08-01), Kamoshita
patent: 2006/0226759 (2006-10-01), Masuda et al.
patent: 2007/0090381 (2007-04-01), Otsuka et al.
patent: 2007/0194709 (2007-08-01), Kato et al.
patent: 2009/0008666 (2009-01-01), Otsuka et al.
patent: 2001-210874 (2001-08-01), None
patent: 2004-179644 (2004-06-01), None

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