Optical semiconductor device

Details Optical semiconductor device Optical semiconductor device

2007-05-29

2007-05-29

Hoang, Quoc (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S009000, C257SE29072, C438S962000, C438S508000, C438S508000

Reexamination Certificate

active

11210760

ABSTRACT:
In the semiconductor laser or electro-absorption optical modulator that includes strained quantum well layers as active layers, making laser characteristics or modulator characteristics adequate has seen the respective limits since band structures, especially, ΔEc and ΔEv, have been unable to be adjusted independently.This invention is constructed by stacking an n-type InGaAlAs-GRIN-SCH layer3, an MQW layer4, a p-type InGaAlAs-GRIN-SCH layer5, a p-type InAlAs electron-stopping layer6, and others, in that order, on an n-type InP wafer1; wherein the MQW layer4includes InGaAlAs-strained quantum well layers and InGaAlAsSb-formed barrier layers each having strain of an opposite sign to the strain applied to the quantum well layers.

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