Optical semiconductor device

Details Optical semiconductor device Optical semiconductor device

2011-04-12

2011-04-12

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046010

Reexamination Certificate

active

07924896

ABSTRACT:
An optical semiconductor device includes an active layer, a first semiconductor layer formed above the active layer and made from a semiconductor material containing Al, a second semiconductor layer formed above the first semiconductor layer and made from a semiconductor material which does not contain any one of Al and P and whose band gap is greater than that of the active layer, and a third semiconductor layer formed above the second semiconductor layer and made from a semiconductor material which does not contain Al but contains P. The second semiconductor layer is formed such that the first semiconductor layer and the third semiconductor layer do not contact with each other.

REFERENCES:
patent: 2002/0071462 (2002-06-01), Takemoto et al.
patent: 2004/0066818 (2004-04-01), Yamamoto et al.
patent: 2005/0147145 (2005-07-01), Behfar et al.
patent: 6-112530 (1994-04-01), None
patent: 9-36494 (1997-02-01), None
patent: 2002-26457 (2002-01-01), None
patent: 2005-243743 (2005-09-01), None
International Search Report of PCT/JP2006/305743, date of mailing Apr. 18, 2006.

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