Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2011-03-22
2011-03-22
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S186000, C257S189000, C257S438000, C257SE31063, C257SE31116, C257SE29180
Reexamination Certificate
active
07910953
ABSTRACT:
An optical semiconductor device includes a distributed Bragg reflection layer of a first conductivity type, a distortion elaxation layer of the first conductivity type, a light absorbing layer, and a semiconductor layer of a second conductivity type, sequentially arranged on a semiconductor substrate. The distortion relaxation layer the same material as the semiconductor substrate. The total optical length of layers between the distributed Bragg reflection layer and the light absorbing layer is an integer multiple of one-half the wavelength of incident light that is detected.
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E. Ishimura et al., “Record High-Efficient Top Illuminated InGaAs Pin Photodiodes with 20 GHz-Bandwidth”, Th.L.3.9 Proc. 21stEur. Conf. On Opt. Comm. (ECOC'95-Brussels, pp. 1079-1082, Date: 1995.
Ishimura Eitaro
Nakaji Masaharu
Yagyu Eiji
Chi Suberr
Leydig , Voit & Mayer, Ltd.
Mitsubishi Electric Corporation
Vu David
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