Optical semiconductor device

Details Optical semiconductor device Optical semiconductor device

1995-11-15

1998-02-10

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 26, 372 45, 372 46, H01S 319

Patent

active

057177104

ABSTRACT:
In an optical semiconductor device including a DFB laser and a light absorption modulator, a semi-insulating semiconductor layer is disposed between a carrier blocking layer and a upper cladding layer, the upper cladding layer having an opposite conductivity type from that of the semiconductor substrate and disposed on a buried waveguide and the carrier blocking layer. The capacitance between the carrier blocking layer and the upper cladding layer is reduced. Therefore, mutual interference between the DFB laser and the light absorption modulator through the carrier blocking layer is reduced.

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Aoki et al, "InGaAs/InGaAsP MOW Electroabsorption Modulator Integrated With A DFB Laser Fabricated By Band-Gap Energy Control Selective Area MOCVD", IEEE Journal of Quantum Electronics, vol. 29, No. 6, 1993, pp. 2088-2096, Jun. 1993.
Soda et al., "High-Power and High-Speed Semi-Insulating BH Semi-Insulating BH Structure Monolithic Electroabsorption Modulator/DFB Laser Light Source", Electronics Letters., vol. 26, No. 1, pp. 9-10, Jan. 4, 1990.
Koch et al., "Semiconductor Photonic Integrated Circuits", IEEE Journal of Quantum Electronics, vol. 27, No. 3, pp. 641-653, Mar. 1, 1991.

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