Optical semiconductor device

Details Optical semiconductor device Optical semiconductor device

1988-11-21

1991-03-19

Davie, James W.

Coherent light generators

Particular component circuitry

Optical pumping

357 17, 357 60, 372 45, H01L 3300

Patent

active

050015222

ABSTRACT:
An optical semiconductor device is disclosed that comprises a quantum-well structure as an active region and exhibits a nonlinear optical effect with regard to light of energy near the band gap between the allowed band edges in the active region. The quantum-well structure of this device is composed of alternate layers consisting of at least one first semiconductor layer with a thickness smaller than the de Broglie wavelength of carriers and at least two second semiconductor layers with a band gap greater than that of the first semiconductor layer, the alternate layers being formed along a crystal orientation in the zinc-blende structure. The second semiconductor layers mentioned above are of an indirect transition type.

REFERENCES:
patent: 4890293 (1989-12-01), Taneya et al.
patent: 4894836 (1990-01-01), Hayakawa et al.
Miller, D. A. B., et al., IEEE Journal of Quantum Electronics vol. QE-21, No. 9, Sep. 1985, pp. 1462-1476.
Nagai, H., et al., Japanese Journal of Applied Physics, vol. 25, No. 8, Aug. 1986, pp. L640-642.
Tsai, C. S., et al., IEEE Journal of Quantum Electronics vol. QE-14, No. 7, Jul. 1978, pp. 513-517.
European Search Report for EPC Application 88/310929.0, dated Mar. 26, 1990.
Miller et al., (Sep. 1985) Journal of Quantum Electronics, vol. QE-21, No. 9, "The Quantum Well Self-Electrooptic Effect Device: Optoelectronic Bistability and Oscillation, and Self-Linearized Modulation".

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