Optical semiconductor device

Details Optical semiconductor device Optical semiconductor device

1991-11-29

1993-10-12

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

052532640

ABSTRACT:
A semiconductor laser of multiple quantum well structure includes a multiple quantum well active layer having a well layer of In.sub.x Ga.sub.1-x As (0<x .ltoreq.1), a first p-type clad layer which is formed on the active layer and lattice-matches with InP, and a second p-type clad layer having a higher acceptor concentration than the first p-type clad layer. The acceptor concentration of the first p-type clad layer is set to be not more than 2 .times.10.sup.17 cm.sup.-3 and that of the second p-type region is set to be not less than 1.times.10.sup.18 cm.sup..times.3 in the range of 0.25 .mu.m from the active layer. The well layer of the active layer is formed of In.sub.x Ga.sub.1-x As (0.53<x .ltoreq.1). A laser in which the efficiency of injection into the active layer is increased and which has a small threshold value and excellent high-speed characteristic can be provided.

REFERENCES:
patent: 5111471 (1992-05-01), Hattori
IEEE Journal of Quantum Electronics, vol. QE-22, No. 6, Jun. 1986, pp. 833-843, J. E. Bowers, et al., "High Speed InGaAsP Constricted-Mesa Lasers".
Journal of Lightwave Technology, vol. LT-5, No. 12, Dec. 1987, pp. 1778-1781, M. Fukuda, et al., "Suppression of Interface Degradation in InGaAsP/InP Buried Heterostructure Lasers".
IEEE Journal of Quantum Electronics, vol. 25, No. 6, Jun. 1989, pp. 1320-1323, Y. Hirayama, et al., "High-Speed 1.5 .mu.m Self-Aligned Constricted Mesa DFB Lasers Grown Entirely by MOCVD".
Appl. Phys. Letter, vol. 57, No. 3, pp. 224-226, "High Power Output 1.48-1.51 .mu.m Continuously Graded Index Separate Confinement Strained Quantum Well Lasers"; T. Tanbun-Ek et al; Jul. 16, 1990.

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