Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-03-06
1998-05-19
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 18, 257 22, 372 45, 372 46, H01L 2906
Patent
active
057539332
ABSTRACT:
Disclosed is an optical semiconductor device includes a multiquantum well structure comprising a well layer and a barrier layer, wherein: the well layer is made of InGaAsP, InGaAs or InGaP; the barrier layer is made of InGaAlAsP, InGaAlAs or InGaAlP; and optionally the well layer has the same In/Ga ratio as the barrier layer and the well layer is compressively strained. Also disclosed is a vapor-phase growth method of a multiquantum well structure comprises a well layer and a barrier layer or further comprises an intermediate layer between the well layer and the barrier layer, comprising the steps of: continuously supplying at a constant flow rate one or several V group gases and one or several first III group gases during the growth of the multiquantum well; forming the well and barrier layer by interrupting the supply of a second III group gas different from the first III group gas; and forming the intermediate layer by varying a flow rate of the second III group gas.
REFERENCES:
patent: 5253264 (1993-10-01), Suzuki et al.
R. Bhat et al., "OMCVD Grown High Performance 1.3 .mu.m AlGaInAs/InP Strained Quantum Well Lasers," Paper B1-6 (1994).
C. E. Zah et al, "Uncooled Lasers for Deployment of Fiber in the Loop," Optics & Photonics News, Dec. 1993.
NEC Corporation
Tran Minh-Loan
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