Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1995-09-27
1998-07-21
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
372 48, 385132, G02B 610, H01L 3300
Patent
active
057838445
ABSTRACT:
An optical semiconductor device includes an optical semiconductor element, a semiconductor region, and a buried layer. The optical semiconductor element is formed on a semiconductor substrate. The semiconductor region opposes the optical semiconductor element and essentially surrounds the optical semiconductor element to form walls. The buried layer is arranged between the walls of the semiconductor region and the optical semiconductor element and formed by vapor phase epitaxy. In this optical semiconductor device, a distance between the wall of the semiconductor region and a side wall of the optical semiconductor element is larger in a portion in which the growth rate of the vapor phase epitaxy in a horizontal direction from the side wall of the optical semiconductor element and the wall of the semiconductor region is higher.
REFERENCES:
patent: 3425879 (1969-02-01), Shaw et al.
patent: 5094973 (1992-03-01), Pang
patent: 5104824 (1992-04-01), Clausen, Jr. et al.
Kjebon et al., "Regrowth of Semi-Insulating Iron doped InP . . . , " Apr. 1992, IEEE Catalog #92CH3104-7, pp. 48-50.
Patent Abstracts of Japan, vol. 10, No. 186, Jun. 28, 1986 & JPA61032587.
Patent Abstracts of Japan, vol. 7, No. 154, Jul. 6, 1958 & JP58064086.
"Digital Signal Regeneration with Side-Injection-Light-Controlled Bistable Laser Diode as a Wavelength Converter" by K. Nonaka, et al. IEEE Photonics Technology Letters, vol. 7, No. 1, Jan. 1995, pp. 29-31.
"Very Rapid and Selective Epitaxy of InP Around Mesas of Height up to 14 .mu.m by Hydride Vapour Phase Epitaxy" by S. Lourdudoss, et al., 6th Int. Conf. on Indium Phosphide and Related Materials, Santa Barbara, (1994) pp. 615-618.
"Planar Surface Buried-Heterostructure InGaAsP/InP Lasers with Hydride VPE-Grown Fe-Doped Highly Resistive Current-Blocking Layers" by S. Sugou, et al. Electronics Letters 6th Nov. 1986 vol. 22 No. 23 pp. 1214-1215.
Kobayashi Fumihiko
Miyazawa Takeo
Mori Hidefumi
Nakano Jun-Ichi
Jackson Jerome
Kelly Nathan K.
Nippon Telegraph and Telephone Corporation
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