Optical semiconductor device

Details Optical semiconductor device Optical semiconductor device

1994-09-16

1998-10-20

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

372 26, 372 50, H01L 2120, H01L 21205

Patent

active

058250476

ABSTRACT:
An optical semiconductor device comprises a stripe-mesa structure provided on a semi-insulating substrate. The stripe-mesa structure comprises an undoped light absorption layer sandwiched by cladding layers, and by burying layers on both sides. With this structure, the device capacitance is decreased to provide wide bandwidth and ultra-high speed operation properties. This device can be applied to an optical modulator, an integrated type optical modulator, and an optical detector.

REFERENCES:
patent: 4608696 (1986-08-01), Law et al.
patent: 4820655 (1989-04-01), Noda et al.
S.C. Lin et al, "Efficient, Low Parasitics 1.3 .mu.m InGaAsP . . . on Semi-Insulating Substrate", IEEE Photonics Technology Letters, vol. 1, No. 9, Sep. 1989, pp. 270-272.
H. Soda et al, "High-power semi-insulating BH structure . . . light source operating at 10 Gb/s", Conference Papeer, IOOC '89 Technical Digest, 20PDB-5, vol. 5, No. 5, Jul., 1989.
Wakita et al, Preliminary Lecture Paper C-474, Institute of Electronics Informations and Communications Engineers, Spring National Conference 1989 .

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