Optical semiconductor device

Details Optical semiconductor device Optical semiconductor device

1996-08-12

1998-08-04

Palmer, Phan T. H.

Optical waveguides

Planar optical waveguide

Thin film optical waveguide

385 8, 385 52, 385147, 437 36, G02B 610

Patent

active

057907374

ABSTRACT:
A semiconductor laser chip according to the present invention comprises: a p-type InP substrate; an InGaAsP active layer (optical waveguide) formed on said substrate; a p-n-p InP block layer formed on said substrate; a contact layer formed thereupon; an insulating film formed on said contact layer; a front surface electrode formed on said insulating film; a pair of alignment marks formed at the same time of the optical waveguide; and a back surface electrode formed on said substrate. The alignment marks are formed from the same material, i.e., the same crystal as said optical waveguide. Accordingly, it is possible to improve precision of the relative position between said optical waveguide and said alignment marks.

REFERENCES:
patent: 5375182 (1994-12-01), Chambers et al.
patent: 5459081 (1995-10-01), Kajita
Patent Abstracts of Japan, Atsuo Kondo, Appln. No. 4-305325, Nov. 16, 1992, NGK Insulators, Ltd., "Manufacture of Optical Integrated Circuit", 6-160656, Jul. 6, 1994.

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