Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2000-07-27
2001-10-16
Ngô ;, Ngâ ;n V. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S643000, C257S680000, C257S702000, C257S792000, C257S795000, C438S116000
Reexamination Certificate
active
06303978
ABSTRACT:
FIELD OF THE INVENTION
This invention relates, in general, to electronics, and more particularly, to optical semiconductor components and methods of manufacture.
BACKGROUND OF THE INVENTION
Image sensors are used in a wide variety of applications. Image sensors are typically packaged in a cavity of a ceramic substrate, and the cavity is sealed with a glass lid. The substrate and lid are custom parts designed specifically for a particular image sensor. These custom parts and the labor required for their assembly are expensive.
Light Emitting Devices (LEDs) and photodiodes have low-cost packages, but these low-cost packages are not suitable for use with image sensors having high lead counts. Inexpensive silicone gels can be used as a packaging material for image sensors, but silicone gels have a low glass transition temperature, a high coefficient of thermal expansion, and are contaminating. These detrimental characteristics render silicone gels as non-suitable packaging materials for image sensors. Inexpensive epoxies can also be used as packaging materials for image sensors, but epoxies have a high modulus and poor optical conduction. These detrimental qualities render epoxies as non-suitable packaging materials for image sensors.
Accordingly, a need exists for an optical semiconductor component having a low cost package and method of manufacturing such an optical semiconductor component. In addition to being inexpensive, the packaging material in the optical semiconductor component should have a low modulus, a high glass transition temperature, a low coefficient of thermal expansion, non-contaminating characteristics, and high optical transparency.
REFERENCES:
patent: 4276141 (1981-06-01), Hawkins
patent: 4923678 (1990-05-01), Benedikt et al.
patent: 5973337 (1999-10-01), Knapp et al.
patent: 6060664 (2000-05-01), Tanahashi et al.
Daniels Dwight L.
Fang Treliant
Parmenter Athena M.
Goddard Patricia S.
Motorola Inc.
Ngô ; Ngâ ;n V.
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