Optical scanning method of testing material defects

Details Optical scanning method of testing material defects Optical scanning method of testing material defects

1981-09-14

1985-01-15

Levy, Stewart J.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158P, G01R 106

Patent

active

044940696

ABSTRACT:
A method of testing material defects utilizing photovoltaic effect. A detachable, transparent probe coated with either transparent metal or semiconductor is placed in contact with the material under test. The contact forms either a Schottky barrier or a p-n junction. A light spot scanning the material produces photo currents which is sensed. Defects cause a reduction in photo current.

REFERENCES:
"End-Point Detection for Reactive Ion Etching", in IBM Tech. Disc., vol. 20, No. 2, Jul. 1977 by Geipel, pp. 541-542.
"Probe for MOS Measurements", in IBM Tech. Disc., vol. 13, No. 10, Mar. 1971, pp. 2981-2982, by Hoekstra.

Affiliated with

Also associated with

Rating

Optical scanning method of testing material defects does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optical scanning method of testing material defects, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical scanning method of testing material defects will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1483092