Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1997-10-30
1999-05-18
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257 25, 257458, 257461, H01L29/06
Patent
active
059052724
ABSTRACT:
Apparatus for optical communications (10, 110, 210) includes a low-temperature grown photoconductor (12, 140, 220) coupled to at least one resonant tunneling device (14, 120, 130, 230, 240). When exposed to an input light, low-temperature grown photoconductor (10, 110, 210) absorbs photons, which decreases the resistivity, and thus the resistance of the photoconductor. This decrease in resistance causes a decrease in the voltage drop across photoconductor (12, 140, 220), which causes a corresponding increase in the voltage drop across resonant tunneling device (14, 120, 130, 230, 140).
REFERENCES:
patent: 5569933 (1996-10-01), Chu et al.
Brady III W. James
Donaldson Richard L.
Maginniss Christopher L.
Texas Instruments Incorporated
Tran Minh Loan
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