Optical proximity correction (OPC) technique to compensate...

Details Optical proximity correction (OPC) technique to compensate... Optical proximity correction (OPC) technique to compensate...

2004-06-02

2008-09-09

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C716S030000

Reexamination Certificate

active

07422829

ABSTRACT:
A method of adjusting a reticle layout to correct for flare can include determining a localized reticle pattern density across the reticle layout and determining a relationship between reticle pattern density and edge adjustment for the photolithography apparatus being used. For a given feature of the reticle layout, an edge of the feature can be adjusted by a given amount based on the localized reticle pattern density adjacent the given feature. This method allows for a rule-based optical proximity correction (OPC) approach to compensate for long-range and short-range flare within a photolithography apparatus.

REFERENCES:
patent: 6989229 (2006-01-01), Lucas et al.
patent: 7097945 (2006-08-01), Chang et al.
patent: 2004/0196447 (2004-10-01), Watanabe

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