Optical proximity correction method and apparatus

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430 22, G03F 900

Patent

active

057232334

ABSTRACT:
A photolithography optical proximity correction method for mask layouts (e.g., reticle masks) is disclosed. The method includes performing pattern recognition on a layout design to identify locations of feature edges with respect to other feature edges in the layout design. The method further includes obtaining an optical proximity correction for at least one of the feature edges by evaluating one or more non-linear mathematical expressions for optical proximity correction at the location of that edge with respect to other feature edges.

REFERENCES:
patent: 5475766 (1995-12-01), Tsuchiya et al.

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