Optical proximity correction mask for semiconductor device fabri

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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G03F 900

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060338113

ABSTRACT:
A mask for fabricating a semiconductor device, which is capable of correcting an optical proximity effect, includes a transparent mask plate, a main pattern formed on the mask plate as a light blocking layer, and a subsidiary pattern a corner of which is offset in a direction of 45.+-.10 degrees or 135.+-.10 degrees from a line longitudinally extended from the main pattern's edge line. The corner of the subsidiary pattern may be contiguous or non-contiguous with a corner of the main pattern.

REFERENCES:
patent: 5458998 (1995-10-01), Takekuma et al.
patent: 5553273 (1996-09-01), Liebmann
patent: 5705301 (1998-01-01), Garza et al.
patent: 5725973 (1998-03-01), Han et al.
Pratical Optical Proximity Effect Correction Adopting Process Latitude Consideration, Keisuke Tsudaka et al., Jpn. J. Appl. Phys. vol. 34 (1995) pp. 6552-6559, Part 1, No. 12B, Dec. 1995.
Evaluation of Proximity Effects Using Three-Dimensional Optical Lithography Simulation, Chris A. Mack, 634/SPIE vol. 2726, pp. 634-639.
Evaluation of OPC Efficacy, F.M. Schellenberg et al., 680/SPIE vol. 2726, pp. 680-688.

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