Optical proximity correction halftone type phase shift photomask

Details Optical proximity correction halftone type phase shift photomask Optical proximity correction halftone type phase shift photomask

1996-10-30

1998-10-27

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G06F 900

Patent

active

058276238

ABSTRACT:
In a halftone type phase shift photomask, a patterned halftone layer is formed on a transparent substrate, and a light screen layer is formed on the halftone layer. A part of a mask pattern is changed from opaque to halftone, thus improving the resist pattern fidelity.

REFERENCES:
patent: 5429896 (1995-07-01), Hashida et al.
K. Hashimoto et al.; "The Application of Deep UV Phase Shifted-Single Layer Halftone Reticles to 256 Mbit Dynamic Random Access Memory Cell Patterns"; Jpn. J. Appl. Phys., vol. 33, (1994) pp. 6823-6830.
R. Pforr et al.; "Feature biasing versus feature-assisted lithography--a comparison of proximity correction methods for 0.5*(.lambda./NA) lithography"; SPIE, vol. 2440, pp. 150-170.
J. Garofalo et al.; "Reduction of ASIC Gate-level line-end shortening by Mask Compensation"; SPIE, vol. 2440, pp. 171-183.
O. Otto et al., "Integrating proximity effects corrections with photomask data preparation"; SPIE, vol. 2440, pp. 184-191.
J. Garofalo et al.; Automated Layout of Mask Assist-features for Realizing 0.5k.sub.1 ASIC Lithography; SPIE, vol. 2440, pp. 302-2440.
W. Han et al.; "Optical proximity correction using a Transmittance Controlled Mask (TCM)"; SPIE, vol. 2440, pp. 494-505.
T. Yasuzato et al.; "Improvement of resist pattern fidelity with partial attenuated phase shift mask"; Paper 2726-53, SPIE's 1996 International Symposium on Microlithography, Mar. 10-15, 1996, Santa Clara, CA.; p. 255.

Affiliated with

Also associated with

Rating

Optical proximity correction halftone type phase shift photomask does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optical proximity correction halftone type phase shift photomask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical proximity correction halftone type phase shift photomask will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1612552