Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat
Patent
1995-05-26
2000-05-09
Gulakowski, Randy
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
Using heat
117 10, 117904, 438 7, 438 16, 427 10, C30B 100, H01L 2126
Patent
active
060598735
ABSTRACT:
In an annealing process in which laser light is irradiated to a semiconductor thin film, a refractive index of the semiconductor thin film after laser light irradiation is measured and conditions for the next laser light irradiation are adjusted based on the measured refractive index value. For example, laser light irradiation conditions are adjusted so that semiconductor thin films always have the same refractive index. As a result, the annealing can be performed under the same conditions at every laser light irradiation even if the laser light irradiation conditions vary unavoidably. For a crystalline silicon film, if the refractive index is larger than 3.5, then a thin-film transistor using such as film has desired crystallinity and flatness properties such that a field-effect mobility is greater than 100 cm.sup.2 /Vsec.
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Tanaka Koichiro
Teramoto Satoshi
Yamaguchi Naoaki
Alanko Anita
Gulakowski Randy
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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