Optical phase conjugation by four-wave mixing in a semiconductor

Details Optical phase conjugation by four-wave mixing in a semiconductor Optical phase conjugation by four-wave mixing in a semiconductor

1995-03-30

1996-05-21

Scott, Jr., Leon

Coherent light generators

Particular resonant cavity

Specified cavity component

372 9, 372108, 372 21, H01S 308

Patent

active

055197230

ABSTRACT:
A phase conjugate mirror is formed of a compound semiconductor doped with DX centers, such as silicon doped gallium-arsenide, through which are passed three light waves of the same wavelength but in different directions for non-linear four wave mixing. The phase conjugate mirror is used as one mirror of a confocal resonator housing a laser medium to form a laser and light from such laser is used to form the three waves of the same wavelength used to pump the phase conjugate mirror.

REFERENCES:
patent: 4493085 (1985-01-01), Valley
patent: 4709368 (1987-11-01), Fukuda et al.
patent: 5309473 (1994-05-01), Lee
patent: 5377210 (1994-12-01), Hemmer et al.

Affiliated with

Also associated with

Rating

Optical phase conjugation by four-wave mixing in a semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Optical phase conjugation by four-wave mixing in a semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical phase conjugation by four-wave mixing in a semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2045107