Optical modulator and method of manufacturing the same

Details Optical modulator and method of manufacturing the same Optical modulator and method of manufacturing the same

2005-08-02

2005-08-02

Sugarman, Scott J. (Department: 2873)

Optical: systems and elements

Optical modulator

Light wave temporal modulation

C359S254000, C385S008000

Reexamination Certificate

active

06924918

ABSTRACT:
An optical modulator includes a p- or n-type semiconductor layer that is provided at an upper part of an optical waveguide path, and modulating electrodes that are provided at intervals on the semiconductor layer in an extension area of the optical waveguide path. The semiconductor layer has first regions located immediately under the modulating electrodes, and second regions located between the first regions. The second regions have separators that electrically separate the first regions from one another.

REFERENCES:
patent: 2003/0190107 (2003-10-01), Walker
L. Möri et al.; “Traveling Wave Electrodes for 50 Ghz Operation of Opto-Electronic Devices Based on InP”; 11thInternational Conference on Indium Phosphide and Related Materials; Davos, Switzerland; May 16-20, 1999; pp. 385-388./Discussed in the specification.
“Low Voltage, 50Ω, GaAs/AIGaAs Travelling-Wave Modulator with Bandwidth Exceeding 25 GHz”;Electronics Letters; vol. 25; No. 23; Nov. 9, 1989; pp. 1549-1550./Discussed in the specification.

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