Optical waveguides – Temporal optical modulation within an optical waveguide – Electro-optic
Reexamination Certificate
2005-12-20
2005-12-20
Lee, John D. (Department: 2874)
Optical waveguides
Temporal optical modulation within an optical waveguide
Electro-optic
C359S245000, C359S246000, C359S247000
Reexamination Certificate
active
06978055
ABSTRACT:
An optical modulator with lowered chirping without deterioration of extinction characteristic. An intermediate layer is interposed between a well layer and an n-side barrier layer and tensile strain is produced in the well layer. A relationship Ew<Em<Eb is established between a band gap energy Eb (eV) of the barrier layer, the band gap energy Ew (eV) of the well layer, and the band gap energy Em (eV) of the intermediate layer. Another type of tensile strain quantum well structure having four kinds of layers may be employed by adding another layer to the tensile strain quantum well structure having three layers. The band gap energy of an additional layer is between the band gap energies of the well layer and the intermediate layer or between the band gap energies of the intermediate layer and the barrier layer.
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S. M. Sze et al., “Physics of Semiconductor Devices”. John Wiley & Sons, Inc., 1981, pp. 725.
Doan Jennifer
Lee John D.
Leydig , Voit & Mayer, Ltd.
Mitsubishi Denki & Kabushiki Kaisha
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