Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-05-04
1993-12-28
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
359248, 385 14, 257 20, 257 21, 257 85, 257 98, H01L 2714
Patent
active
052742466
ABSTRACT:
A multiple quantum well arrangement which achieves significantly improved third order optical nonlinearity in a semiconductor device by way of spatially periodic electrodes applied to the semiconductor device. The spatial period of the applied electrodes and the resulting exciton confinement dimension is improved over that of previous multiple quantum well structures and to the Bohr radius range of dimensions for the semicondcutor material by way of av
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Boyd Joseph T.
Hopkins Frank K.
Jackson Howard E.
Hollins Gerald B.
Kundert Thomas L.
Mintel William
The United States of America as represented by the Secretary of
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