Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-03-10
2010-06-15
Lindsay, Jr., Walter L (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C438S030000, C257SE21499
Reexamination Certificate
active
07737518
ABSTRACT:
The invention relates to the fabrication of optical microsystems for miniature cameras or miniature matrix displays. It is proposed that N dot matrix arrays and associated circuits should be collectively fabricated, on the front of a semiconductor wafer, to produce N identical chips, with on the side of each array, external connection lands; a plate, used to collectively form N identical optical image-forming structures, each optical image-forming structure covering a respective chip and being designed to form an overall image corresponding with the whole of the matrix array of the respective chip, is fabricated collectively and placed in close contact with the front of the semiconductor wafer; through the thickness of the wafer, conductive vias extending to the contact lands are opened, and, only after these various operations, the wafer is divided into N individual optical microsystems comprising an electronic chip covered by an optical structure.
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Atmel Grenoble S.A.
Lindsay, Jr. Walter L
Lowe Hauptman & Ham & Berner, LLP
Patel Reema
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