Optical metrology of a structure formed on a semiconductor...

Details Optical metrology of a structure formed on a semiconductor... Optical metrology of a structure formed on a semiconductor...

2007-09-25

2007-09-25

Toatley, Jr., Gregory J. (Department: 2877)

Optics: measuring and testing

By light interference

For dimensional measurement

C356S450000, C356S521000

Reexamination Certificate

active

11061330

ABSTRACT:
A structure formed on a wafer can be examined by directing an incident pulse at the structure, the incident pulse being a sub-picosecond optical pulse. A diffraction pulse resulting from the incident pulse diffracting from the structure is measured. A characteristic of the profile of the structure is then determined based on the measured diffraction pulse.

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