Optical method measuring thin film growth

Optics: measuring and testing – By light interference – For dimensional measurement

Reexamination Certificate

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C356S451000

Reexamination Certificate

active

10489497

ABSTRACT:
A method of determining the rate of change of optical thickness of a thin-film during deposition comprising the steps of illuminating the thin-film (5) with electromagnetic radiation (3) having a range of wavelengths, measuring the transmission spectrum (6,7) of the thin-film (5) at least twice during the deposition process to determine the wavelength λtor turning points in the transmission spectrum, and using the measurements to determine the rate to change of optical thickness of the thin-film as a function of time. The method further comprises the steps of predicting a time T in the growth process at which the wavelength λtof the turning point in the transmission spectrum of the thin-film will be substantially equal to the wavelength λdof the turning point in the transmission spectrum of thin-film at its optical design thickness, and interrupting the growth process such that growth ceases at time T.

REFERENCES:
patent: 5883720 (1999-03-01), Akiyama et al.
patent: 55 033644 (1980-03-01), None
patent: 580052475 (1983-03-01), None
patent: 010132767 (1989-05-01), None
patent: 2001021324 (2001-01-01), None
“Thin Film Thickness Monitor” Solid State Technology, vol. 33, pp. 48-50 (1990).

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