Optical method for the characterization of the electrical proper

Optics: measuring and testing – For light transmission or absorption

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356417, 356432T, 356319, 356445, 356381, 356345, 73800, 250226, G01N 2100

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active

060089067

ABSTRACT:
A method for characterizing a sample includes the steps of (a) providing a semiconductor material; (b) applying at least one of an electric field, a pulsed or cw light source, a change in temperature and/or a change in pump pulse intensity to the semiconductor material; (c) absorbing pump light pulses in a portion of the semiconductor material and measuring changes in optical constants as indicated by probe light pulses applied at some time t following the absorption of the pump light pulses; and (e) associating a measured change in the optical constants with at least one of a surface charge, dopant concentration, trap density, or minority carrier lifetime.

REFERENCES:
patent: 4484820 (1984-11-01), Rosencwaig
patent: 4522510 (1985-06-01), Rosencwaig et al.
patent: 4579463 (1986-04-01), Rosencwaig et al.
patent: 4632561 (1986-12-01), Rosencwaig et al.
patent: 4636088 (1987-01-01), Rosencwaig et al.
patent: 4679946 (1987-07-01), Rosencwaig et al.
patent: 4710030 (1987-12-01), Tauc et al.
patent: 4750822 (1988-06-01), Rosencwaig et al.
patent: 4795260 (1989-01-01), Schuur et al.
patent: 4854710 (1989-08-01), Opsal et al.
patent: 4952063 (1990-08-01), Opsal et al.
patent: 4999014 (1991-03-01), Gold et al.
patent: 5042951 (1991-08-01), Gold et al.
patent: 5042952 (1991-08-01), Opsal et al.
patent: 5074669 (1991-12-01), Opsal
patent: 5255070 (1993-10-01), Pollak et al.
patent: 5287169 (1994-02-01), Pollak et al.
patent: 5303032 (1994-04-01), Uesu et al.
patent: 5379109 (1995-01-01), Gaskill et al.
patent: 5546811 (1996-08-01), Rogers et al.
patent: 5748317 (1998-05-01), Maris et al.
patent: 5748318 (1998-05-01), Maris et al.
Sumie et al ; "Analysis . . . Measurements"; J. Appl. Physics 76(10), Nov. 15, 1994 pp. 5681-5689.
W. Lee Smith et al. "Ion implant monitoring with thermal wave technology". Appl. Phys.Lett.. vol. 47, No. 6, Sep. 15, 1985. pp. 584-586.
J. Opsal et al. "Thermal and plasma wave depth profiling in silicon". Appl. Phys. Lett. vol. 47 No. 5, Sep. 1, 1985. pp. 498-500.
A. Rosencwaig et al. "Thin-film thickness measurements with thermal waves". Appl. Phys. Lett., vol. 43 No. 2, Jul. 15, 1983. pp. 166-168.
A. Rosencwaig et al. "Detection of thermal waves through optical reflectance". Appl. Phys. Lett., vol. 46 No. 11, Jun. 1, 1985. pp. 1013-1015.
A. Elci et al. "Physics of Ultrafast Phenomena in Solid State Plasmas". Solid-State Electronics, vol. 21, 1978, pp. 151-158.
D.H. Auston et al. "Picosecond Spectroscopy of Semiconductors". Solid-State Electronics, vol. 21, 1978, pp. 147-150.
D. H. Auston et al. "Picosecond Ellipsometry of Transient Electron-Hole Plasmas in Germanium". Physical Review Letters, vol. 32 No. 20. May 20, 1974 pp. 1120-1123.
R.J. Stoner et al. "Kapitza conductance and heat flow between solids at temperatures from 50 to 300K". Physical Review B, vol. 48, No. 22, Dec. 1, 1993 pp. 16 373-16 387.
R.J. Stoner et al. "Measurements of the Kapitza Conductance between Diamond and Several Metals". Physical Review Letters, vol. 68 No. 10, Mar. 9, 1992 pp. 1563-1566.
S. Sumie et al. "A New Method of Photothermal Displacement Measurement by Laser Interferometric Probe". Jpn. J. Appl. Phys. vol. 31 Pt. 1, No. 11, 1992 pp. 3575-3583.
F.E. Doany et al. "Carrier lifetime versus ion-implantation dose in silicon on sapphire". Appl. Phys. Lett. 50(8), Feb. 23, 1987 pp. 460-462.
D.A. Young et al. "Heat Flow in Glasses on a Picosecond Timescale". Dept. of Engineering, Brown University, Providence, RI. 1986. pp. 49-51.
Donald W. Phillion et al., "Subnanosecond relation time measurements using a transient induced grating method", Applied Physics Letters, vol. 27, No. 2, Jul. 15, 1975, pp. 85-86.
"Noninvasive picosecond ultrasonic detection of ultrathin interfacial layers: CFx at the Al/Si interface" by G. Tas, R. J. Stoner and H.J. Maris, Appl Phys. Lett. 61 (15). Oct. 12, 1992 pp. 1787-1789.
"Detection of Thin Interfacial Layers by Picosecond Ultrasonics" by G. Tas, R.J. Stoner J. Maris, G.W. Rubloff, G.S. Oehrlein and J.M. Halbout, Mat. Res. Soc. Symp. Proc. vol. 259 1992 Materials Research Society, pp. 231-236.
"Surface Generation and Detection of Phonons by Picosecond Light Pulses" C. Thomsen et al. Physical Review B. vol. 34, No. 6, Sep. 15, 1986, The American Physical Society, pp. 4129-4138.
"Sound Velocity and Index of Refraction of AlAs Measured by Pico-second Ultrasonics", H.T. Grahn, et al. Appl. Phys. Lett. 53(21), Nov. 21, 1988 pp. 2023-2024.
"Elastic Properties of Silicon Oxynitride Films Determined by Pico-second Acoustics" by H.T. Grahn et al., Appl. Phys. Lett. 53 (23), Dec. 5, 1988, pp. 2281-2283.
"Picosecond optical studies of amorphous diamond and diamondlike carbon: Thermal conductivity and longitudinal sound velocity", Christopher J. Morath, et al, J. Appl. Phys., vol. 76, No. 5, Sep. 1, 1994, p. 2636.
"Study of vibrational modes of gold nanostructures by picosecond ultrasonics", H.N. Lin, et al., J. Appl. Phys. vol. 73, No. 1, Jan. 1, 1993.
"Nondestructive detection of titanium disilicide phase transofrmation by picosecond ultrasonics", H.N. Lin, et al., Applied Physics Letters, No. 61, p. 2700, 1992.
Attenuation of longitudinal-acoustic phonons in amorphous SiO.sub.2 at frequencies up to 440 GHz, T.C. Zhu, et al., The American Physical Society 1991.
"Detection of Titanium Silicide Formation And Phase Transformation by Picosecond Ultrasonics", H.N. Lin, et al., Mat. Res. Soc. Proc. Advanced Metalization and Processing for Semiconductor Devices III, vol. 260, p. 221 (1992).
"Ultrasonic Experiments at Ultra-High Frequency with Picosecond Time-Resolution", H.N. Lin, et al., IEEE Ultrasonics Symp. 90.
"Picosecond Optics Studies of Vibrational and Mechanical Properties of Nanostructures ", H. J. Maris, et al., AMD-vol. 140, Acousto-Optics and Acoustic Microscopy ASME 1992.
"Time-resolved study of vibrations of a-Ge:H/a-Si:H multilayers", T.H. Grahn, et al Physical Review B, vol. 38, No. 9, Sep. 15, 1988.
"Picosecond Ultrasonics", Holger T. Grahn, et al., IEEE Journal of Quantum Electronics, vol. 25, No. 12, Dec. 1989.
Nondestructive Testing of Microstructures by Picosecond Ultrasonics, H.N. Lin, et al., Journal of Nondestructive Evaluation, vol. 9, No. 4, 1990.
"Phonon Attenuation and Velocity Measurements in Transparent Materials by Picosecond Acoustic Interferometry", H.N. Lin, et al. Journal of Applied Physics, vol. 69, p. 3860 (Apr. 1991).
"Studies of High-Frequency Acoustic Phonons Using Picosecond Optical Techniques", H.J. Maris, et al., Phonon Scattering in Condensed Matter 5, Eds. A.C. Anderson, J.C. Wolfe, Springer, Berlin, 1986, p. 374.
"Picosecond Photoinduced Electronic and Acoustic Effects In a-Si:H Based Multilayer Structures", H.T. Grahn, et al., Journal of Non-Crystalline Solids 97&98 (1987) p. 855-858.
"Picosecond Acoustics As A Non-Destructive Tool For The Characterization of Very Thin Films", C. Thomsen, et al., Thin Solid Films, 154 (1987) pp. 217-223.

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