Optical memories using electron trapping material

Details Optical memories using electron trapping material Optical memories using electron trapping material

1998-02-27

2000-09-12

Phan, Trong

Static information storage and retrieval

Radiant energy

365215, G11C 1300

Patent

active

061186848

ABSTRACT:
A three-dimensional memory based on the electron trapping materials, comprising at least two thin film layers of different or the same electron trapping materials for storing information in the form of the trapped charges and releasing information in the form of light energy, each of the thin film layers of the electron trapping materials being sandwiched between a pair of transparent electrodes. The thin film layer itself is a multiple layer of one or more than two types of electron trapping materials in which the impurity atoms are modulation doped with predetermined modulation profiles. The page-by-page addressing is achieved by applying a suitable voltage to the information to be addressed. Separate control of writing and reading processes is made possible by varying the voltage polarity.

REFERENCES:
patent: 3658584 (1972-04-01), Schmidt
patent: 4864536 (1989-09-01), Lindmayer
patent: 5502706 (1996-03-01), Yang et al.

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