Optical measuring method for semiconductor multiple layer...

Details Optical measuring method for semiconductor multiple layer... Optical measuring method for semiconductor multiple layer...

2006-05-02

2006-05-02

Evans, F. L. (Department: 2877)

Optics: measuring and testing

Plural test

C356S317000, C356S318000, C356S432000, C356S445000

Reexamination Certificate

active

07038768

ABSTRACT:
In a measuring apparatus for a semiconductor multiple layer structure, a spectrometer disperses light from a sample for measurement of the photoluminescence spectrum or disperses probe light to irradiate the sample for the measurement of the reflection spectrum. A controller makes a guide member guide the white light to the spectrometer and acquire electric signals from a first detector for the measurement of the reflection spectrum, and makes the guide member guide the light from the spectrometer to a second detector to acquire electric signals for the measurement of the photoluminescence spectrum.

REFERENCES:
patent: 5064283 (1991-11-01), Tober
patent: 11-51856 (1999-02-01), None
patent: 2001-110806 (2001-04-01), None
H. Shen et al., “Franz-Keldysh Oscillations In Modulation Spectroscopy”,J. Appl. Phys., Aug. 1995, pp. 2151-2176, 78(4).
T. Katoda, “Techniques For Evaluating a Semiconductor”,Textbook, 1989.

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