Optical measurements of fine line parameters in integrated circu

Optics: measuring and testing – By dispersed light spectroscopy – Utilizing a spectrometer

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29574, 356237, G01B 1102

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active

044088841

ABSTRACT:
The image transfer process in integrated circuit (IC) processes such as large scale integrated (LSI) device process manufacturing is monitored by optical measurements on a stage-by-stage basis by measuring a monitor specimen or test sample formed with a diffraction grating of a predetermined pattern having a strip width corresponding to the desired line widths of the wafers or masks being monitored. A beam of monochromatic light is scanned over the test sample to generate diffracted beams of various orders. Line width, line depth, line edge profile process errors can be determined by various combinations of the diffracted beams of the zero, first, second, etc., orders. The test sample is scanned to generate a display for data representing the diffracted beams. The parameter data can be stored for later use for quality control, process monitoring, circuit design parameters, and the like. Moreover, gross process errors are visually discernible on the monitor specimen.

REFERENCES:
patent: 4180830 (1979-12-01), Roach
patent: 4200396 (1980-04-01), Kleinknecht et al.
patent: 4236823 (1980-12-01), Roach et al.
H. P. Kleinknecht and H. Meier, "Linewidth Measurement on IC Masks and Wafers by Grating Test Patterns," Applied Optics, vol. 19, pp. 525-533, (1980).
W. R. Roach, et al., "Diffraction Spectometry for VideoDisc Quality Control," RCA Review, vol. 39, Sep. 1978, pp. 472-511.
Technical Note 1143, mailed Mar. 16, 1976, entitled "Method For Measuring The Average Aperture Size of a Plurality of Apertures in a Kinescope Shadow Mask," by A. H. Firester.
H. P. Kleinknecht, et al., "Use of Large Area Grating Patterns for Scanning of Linewidth Across IC Masks and Wafers," Abst. S35, p. 203, Europhys. Conf. ESSDERC, Sep. 15-18, 1980, York, England.
W. E. Ham et al., "A Method for Determining the Sources of LSI Linewidth Errors in IC Processes," Abst. S36, p. 205, Europhys. Conf. ESSDERC, Sep. 15-18, 1980, York, England.

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