Optical measurement of planarized features

Optics: measuring and testing – With plural diverse test or art

Reexamination Certificate

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C356S237200

Reexamination Certificate

active

06842235

ABSTRACT:
There is provided a method for measuring planarized features on a wafer of a semiconductor device. The planarized features on the wafer are illuminated. A reflected light beam with respect to the planarized features is detected. Optical characteristics of the reflected light beam are analyzed to determine information corresponding to the planarized features. Preferably, the analyzing step maximizes an analysis of the optical characteristics based upon a simplified geometry of the planarized features with respect to a geometry of similar, un-planarized features. Moreover, preferably, the analyzing step maximizes an analysis of the optical characteristics based upon a reduction in complexity of the planarized features due to a similarity in refractive indexes corresponding to a bulk silicon substrate and a poly silicon fill of the semiconductor device.

REFERENCES:
patent: 5432607 (1995-07-01), Taubenblatt
patent: 6307627 (2001-10-01), Vurens
patent: 6437862 (2002-08-01), Miyazaki et al.
patent: 6538731 (2003-03-01), Niu et al.
patent: 6545753 (2003-04-01), Subramanian et al.
patent: 6570662 (2003-05-01), Schictinger et al.

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