Optical link apparatus

Optical waveguides – With disengagable mechanical connector – Optical fiber to a nonfiber optical device connector

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385 14, G02B 636

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active

055464890

ABSTRACT:
In an optical link apparatus of the present invention, a hybrid IC which is a main amplifier of a receiver circuit, and a hybrid IC which is a transmitter circuit are mounted on an island of a lead frame. An OEIC in which electronic devices and a light receiving device which constitute a preamplifier of the receiver circuit are integrated is housed in a light receiving device unit. A light emitting device is housed in a light emitting device unit. Sleeves which are optical link components are installed at the light receiving device unit and the light emitting device unit, and one ends of the sleeves are protruded from a plastic molding to the outside. As wires are connected to lead pins, the hybrid ICs are electrically connected with the light receiving device unit and the light emitting device unit. The lead pins, the hybrid ICs, the light receiving device unit, the light emitting device unit, and the sleeves are integrally sealed by a plastic molding which is superior in productivity and processability. Therefore, the optical link apparatus which is small and superior in productivity can be achieved.

REFERENCES:
patent: 4911519 (1990-03-01), Burton et al.
patent: 4930857 (1990-06-01), Acarlar
patent: 5123066 (1992-06-01), Acarlar
patent: 5127071 (1992-06-01), Go
patent: 5276754 (1994-01-01), Blair et al.
patent: 5325454 (1994-06-01), Rittle et al.
patent: 5345524 (1994-09-01), Lebby et al.
patent: 5345530 (1994-09-01), Lebby et al.
patent: 5353364 (1994-10-01), Kurashima
patent: 5361318 (1994-11-01), Go et al.
patent: 5416871 (1995-05-01), Takahashi et al.
E. Tokumitsu et al. "Reduction of the Surface Recombination Current in InGaAs/InP Pseudo-Heterojunction Bipolar Transistors Using a Thin InP Passivation Layer" IEEE Electron Device Letters, vol. 10, No. 12, pp. 585-587 (Dec. 1989).
S. Chandrasekhar et al. "A Monolithic 5 Gb/s p-i-n/HBT Intergrated Photoreceiver Circuit Realized from Chemical Beam Epitaxial Material" IEEE Photonics Technology Letters, vol. 3, No. 9, pp. 823-825 (Sep. 1991).
S. Chandrasekhar et al. "An InP/InGaAs p-i-n/HBT Monolithic Transimpedance Photoreceiver" IEEE Photonics Technology, vol. 2, No. 7, pp. 505-506 (Jul. 1990).

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