Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2008-07-29
2008-07-29
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S037000, C257SE49003, C438S031000
Reexamination Certificate
active
07405421
ABSTRACT:
The present invention provides an optical device integrating an active device with a passive device without any butt joint structure between two devices. The optical integrated device of the invention includes a GaAs substrate, first and second cladding layers, and an active layer sandwiched by the first and second cladding layers. These layers are disposed on the GaAs substrate. The GaAs substrate provides a first region and a second region. The active layer comprises of the first active layer disposed on the first region and the second active layer disposed on the second region of the GaAs substrate. The first active layer has a quantum well structure whose band-gap energy smaller than 1.3 eV, while the second active layer has a quantum well structure whose band-gap energy is greater than that of the first active layer.
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Computer generated English translation of applicant's admitted prior art, Japanese published application JP 2001-148531, printed on Oct. 12, 2006.
Hashimoto Jun-Ichi
Katsuyama Tsukuru
Koyama Kenji
Ingham John C
Smith , Gambrell & Russell, LLP
Sumitomo Electric Industries Ltd.
Weiss Howard
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