Optical information recording medium and method of...

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Reexamination Certificate

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C428S064400, C430S270110

Reexamination Certificate

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07494700

ABSTRACT:
An optical information recording medium includes an oxide
itride dielectric film that shows a film forming rate higher than that of SiON film and hence is adapted to mass production. The recording medium shows little change in the reflectivity after a long environment test. A first dielectric layer made of ZnS—SiO2, an oxide
itride dielectric layer made of silicon-nickel oxide
itride, a second dielectric layer made of ZnS—SiO2, a first interface layer made of GeN, a recording layer made of Ge2Sb2Te5, a second interface layer made of GeN, a third dielectric layer made of ZnS—SiO2and a reflection layer are laid sequentially on a transparent substrate in the above mentioned order. The oxide
itride dielectric layer is formed by reactive sputtering in a mixed gas atmosphere containing Ar gas, O2gas and N2gas. The refractive index of the oxide
itride dielectric layer is made lower than that of the first dielectric layer and that of the second dielectric layer and the light absorption coefficient of the recording layer is made lower in an amorphous state than in a crystalline state.

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