Optical immersed type photovoltaic detector

Details Optical immersed type photovoltaic detector Optical immersed type photovoltaic detector

1984-04-03

1987-01-13

Davie, James W.

Metal fusion bonding

Process

Critical work component, temperature, or pressure

357 61, 22826311, 22826312, H01L 2714, B23K 119, B23K 3536

Patent

active

046368280

ABSTRACT:
The invention relates to an immersed type photovoltaic detector comprising a substrate transparent to infrared radiations and a wafer in semiconducting material. A PN junction is formed in the wafer, on the side opposite the substrate, with a zone of conductivity opposite that of the rest of the wafer. The substrate, on the side opposite the wafer, has the form of a hemispherical lens. The substrate and the wafer are welded by a layer of tellurium transparent to infrared radiations after dissolution by the tellurium of the substrate and of the wafer. The detector is advantageously used for the evaluation of lenses.

REFERENCES:
patent: 3371213 (1968-02-01), Adams et al.
patent: 4024397 (1977-05-01), Weiner
patent: 4435224 (1984-03-01), Durand
Lanin et al., "Backside-Illuminated HyCdTe/CdTe Photodiodes", Jan. 1, 1979, Applied Physics Letters, 34(1); pp. 50-52.

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