Television – Camera – system and detail – Solid-state image sensor
Reexamination Certificate
2004-02-07
2010-06-08
Tran, Nhan T (Department: 2622)
Television
Camera, system and detail
Solid-state image sensor
C348S223100, C348S294000, C250S208100, C257S291000
Reexamination Certificate
active
07733400
ABSTRACT:
Provided is an optical image receiving device having a high and rapid sensitivity and a wide dynamic range manufacture in a CMOS process. The image receiving device includes a capacitor transistor for a special purpose in addition to a general structure of three transistors and a light receiving portion. The capacitor transistor has first and second source/drain ports connected to the capacitance node and the floating diffusion node, respectively, and is gated in response to activation of a predetermined capacitor control signal. In the CMOS optical image receiving device, the floating diffusion node is pumped over an external power voltage. Thus, the electronic potential of the floating diffusion node in the initialization state is much higher than the maximum voltage of the light receiving portion. Thus, the CMOS active pixel has a very high sensitivity in a region where the intensity of light is weak. Furthermore, since the sensitivity decreases in a region where the intensity of light is strong, the dynamic range thereof can be increased very large.
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PCT International Search Report; PCT/KR2004/000237; Dated: Feb. 7, 2003.
Written Opinion of the International Searching Authority of Corresponding PCT Application: PCT/KR/2004/000237; Dated: Jun. 12, 2004.
Dagnew Mekonnen
Kile Goekjian Reed & McManus
Park Jae Y.
Siliconfile Technologies Inc.
Tran Nhan T
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