Optical guided wave devices employing semiconductor-insulator st

Details Optical guided wave devices employing semiconductor-insulator st Optical guided wave devices employing semiconductor-insulator st

1983-02-03

1985-05-21

Lee, John

350 9618, 350 9619, G02B 5174

Patent

active

045182191

ABSTRACT:
A three-dimensional optical waveguide is disclosed. This waveguide comprises a single crystal semiconductor layer grown upon an insulator which has an index of refraction lower than the semiconductor. The semiconductor layer has a thickness which provides confinement of light propagating in the semiconductor layer in the vertical direction. An effective larger index of refraction over a cross-sectional region of the semiconductor layer provides confinement of light in the lateral direction. This lateral confinement is achieved by side walls in the semiconductor layer which extend toward, but fall short of, the insulator layer.

REFERENCES:
patent: 3948583 (1976-04-01), Tien
patent: 4066482 (1978-01-01), Shaw
patent: 4070516 (1978-01-01), Kaiser
patent: 4124270 (1978-11-01), Cheo
Samid et al, "Embedded Heterostructure Epitaxy: A Technique For . . . ". . . , Appl. Phys. Lett., vol. 27, No. 7, Oct. 1975, pp. 405-407.
Hatakoshi et al, "Optical Waveguide Lenses," Optica Acta, vol. 26, No. 8, Aug. 1979, pp. 961-968.

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