Optical field-effect transistor with improved sensitivity

Details Optical field-effect transistor with improved sensitivity Optical field-effect transistor with improved sensitivity

1995-08-04

1996-10-22

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257291, 257290, 257258, 257462, 257280, 330308, H01L 31062, H01L 31113

Patent

active

055679730

ABSTRACT:
An FET or MESFET having a semiconductor optically transparent gate. A substrate having a doped channel placed thereon together with a source and a drain with a semiconductor gate formed therebetween may be manufactured using conventional semiconductor manufacturing techniques. The optically transparent highly doped semiconductor gate forms an n+-n junction with the n-type doped channel. This junction is modulated or changed by an optical signal causing a photovoltaic effect that reduces the barrier potential at the n+-n junction resulting in a depletion of the accumulation region. This results in increased flow of current in the doped channel. The transparent highly doped semiconductor gate increases performance of the FET or MESFET optical detector. This is an improvement over conventional metal semiconductor field-effect transistor (MESFET) technology, and can be applied to microwave monolithic integrated circuits (MMIC).

REFERENCES:
patent: 4496964 (1985-01-01), Tsubouchi et al.
patent: 4739385 (1988-04-01), Bethea et al.
patent: 4740823 (1988-04-01), Thompson
patent: 4829346 (1989-05-01), Kasahara et al.
patent: 4859965 (1989-08-01), Paolella et al.
No Author, "Photo-Gate FET", IBM Technical Disclosure Bulletin, vol. 32, 1, Jun. 1989, p. 34.

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