Optical FET with diode adjacent gate

Details Optical FET with diode adjacent gate Optical FET with diode adjacent gate

1996-05-06

1997-03-11

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 72, 257187, 257290, 257291, H01L 2904

Patent

active

056104090

ABSTRACT:
An optical FET includes one or more light-responsive diodes stacked on the gate. Each diode includes a planar (horizontal) junction. The number of diodes is chosen to achieve a desired gate to source potential difference. An electrical connection connects the diode(s) to the source of the FET.

REFERENCES:
patent: 3459944 (1969-08-01), Triebwasser
patent: 4496964 (1985-01-01), Tsubouchi et al.
patent: 4833512 (1989-05-01), Thompson
patent: 4841349 (1989-06-01), Nakano

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