Optical FET

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Patent

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Details

438301, H01L 2100, H01L 2336

Patent

active

057892768

ABSTRACT:
An optical FET includes one or more light-responsive diodes stacked on the gate. Each diode includes a planar (horizontal) junction. The number of diodes is chosen to achieve a desired gate to source potential difference. An electrical connection connects the diode(s) to the source of the FET.

REFERENCES:
patent: 4354309 (1982-10-01), Gardiner
patent: 5235195 (1993-08-01), Tran
patent: 5254480 (1993-10-01), Tran

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