Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-01-12
1996-09-17
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257290, 257292, 257449, 257458, H01L 31062, H01L 31113
Patent
active
055571140
ABSTRACT:
An optical FET includes one or more light-responsive diodes stacked on the gate. Each diode includes a planar (horizontal) junction. The number of diodes is chosen to achieve a desired gate to source potential difference. An electrical connection connects the diode(s) to the source of the FET.
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Leas James M.
Mandelman Jack A.
International Business Machines - Corporation
Mintel William
Reinke, Esq. Wayne F.
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