Optical enhancement of integrated circuit photodetectors

Details Optical enhancement of integrated circuit photodetectors Optical enhancement of integrated circuit photodetectors

2007-03-12

2008-12-02

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S292000, C257S432000, C257SE33076

Reexamination Certificate

active

07459733

ABSTRACT:
A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable through the cover dielectric layer; and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.

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