Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2007-04-24
2007-04-24
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S292000, C257S432000, C257SE33076
Reexamination Certificate
active
10984670
ABSTRACT:
A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable though the cover dielectric layer; and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.
REFERENCES:
patent: 5781233 (1998-07-01), Liang et al.
patent: 5796154 (1998-08-01), Sano et al.
patent: 2001/0010952 (2001-08-01), Abramovich
patent: 2001/0042876 (2001-11-01), Wester
patent: 2002/0079504 (2002-06-01), Kim
patent: 2004/0033640 (2004-02-01), Izumi et al.
patent: 2004/0214368 (2004-10-01), Rhodes
patent: 2006/0057765 (2006-03-01), Hsu et al.
patent: 1626442 (2006-02-01), None
patent: 62023161 (1987-01-01), None
patent: 2003338613 (2003-11-01), None
Crook Mark D.
Dungan Thomas E.
Palsule Chintamani
Stanback John H.
Ho Tu-Tu
Micro)n Technology, Inc.
LandOfFree
Optical enhancement of integrated circuit photodetectors does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Optical enhancement of integrated circuit photodetectors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Optical enhancement of integrated circuit photodetectors will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3725474